Ron Birkhahn
III-Nitride Materials Engineer
Experience
2012 - Present
Transphorm Inc.
Senior Director, Global Materials Engineering & Epi Sales
Responsible for MOCVD activities in both R&D and production of AlGaN/GaN HEMTs on both SiC and Silicon substrates.
2010 - 2011
Bridgelux Inc.
Advanced Materials Manager
Guided development on using silicon substrates for GaN LED chips.
2003 - 2010
International Rectifier Inc.
Advanced Materials Manager
Established and managed IR’s remote epitaxial operations facility. Managed rapid expansion of personnel and equipment for manufacturing activities and ISO 9001:2008 certification. Served as general manager for MN operations.
About Me
After working in the III-Nitride semiconductor field for >17 years on both optical and electronic applications, I’ve developed expertise in materials technology development and characterization including AlGaN and AlN-based materials. My epitaxial experience includes both MOCVD and MBE growth technology with 5 patents and over 30 manuscripts published in the III-nitride field.
Education
1999
Ph.D. Materials Science Engineering
University of Cincinnati
1994
M.S. Materials Science
University of Minnesota
1992
B.A. Physics
Wittenberg University
Skills
Contact
- https://ron.polydidact.org
- [email protected]
- (925) 290 7661
Accomplishments
CEO Award at International Rectifier
Acquisition of APA Enterprises’s assets by International Rectifier
Over 30 manuscripts published in refereed journals primarily in III-Nitride materials
University of Oregon New Venture Championship: 4th Place, 2000
University of Cincinnati MBA Business Case Competition: Winner, 1999
Patents
PATENT: US 8,575,660 B2; Group III-V semiconductor device with strain-relieving interlayers. (2013)
PATENT: US 9,318,560 B1; Group III-V Device with Strain-Relieving Layers. (2016)
PATENT: US 8,269,253 B2; Rare Earth Enhanced High Electron Mobility Transistor and Method for Fabrication of Same. (2012)
PATENT: US 6,406,930 B2; Fabrication of Visible Light Emitting Device Formed From Wide Band Gap Semiconductor Doped With A Rare Earth Element. (2002)
PATENT: US 6,255,669 B1; Visible Light Emitting Device Formed From Wide Band Gap Semiconductor Doped With A Rare Earth Element. (2001)